By Topic

Growth model for PbTiO3 thin films grown by surface‐reaction enhanced metalorganic chemical vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
2 Author(s)
Yamashita, Atsushi ; Microelectronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305 Japan ; Tatsumi, T.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

PbTiO3 thin films were prepared by surface‐reaction enhanced metalorganic chemical vapor deposition. The deposition rate was limited by supply of a Ti precursor. In contrast, the deposition rate and composition were kept constant for a certain range of Pb‐source feeding, although the deposition rate of PbTiO3 was lower than that of TiO2. From these results, we proposed a growth model for PbTiO3: stoichiometric PbTiO3 film is grown by the Ti species arriving and reacting on the Pb‐covered surface. The Ti sticking coefficient is rather small on such a surface. This model qualitatively explains the change in step coverage. © 1995 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:67 ,  Issue: 9 )