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Growth model for PbTiO3 thin films grown by surface‐reaction enhanced metalorganic chemical vapor deposition

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2 Author(s)
Yamashita, Atsushi ; Microelectronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305 Japan ; Tatsumi, T.

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PbTiO3 thin films were prepared by surface‐reaction enhanced metalorganic chemical vapor deposition. The deposition rate was limited by supply of a Ti precursor. In contrast, the deposition rate and composition were kept constant for a certain range of Pb‐source feeding, although the deposition rate of PbTiO3 was lower than that of TiO2. From these results, we proposed a growth model for PbTiO3: stoichiometric PbTiO3 film is grown by the Ti species arriving and reacting on the Pb‐covered surface. The Ti sticking coefficient is rather small on such a surface. This model qualitatively explains the change in step coverage. © 1995 American Institute of Physics.

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Applied Physics Letters  (Volume:67 ,  Issue: 9 )