PbTiO3 thin films were prepared by surface‐reaction enhanced metalorganic chemical vapor deposition. The deposition rate was limited by supply of a Ti precursor. In contrast, the deposition rate and composition were kept constant for a certain range of Pb‐source feeding, although the deposition rate of PbTiO3 was lower than that of TiO2. From these results, we proposed a growth model for PbTiO3: stoichiometric PbTiO3 film is grown by the Ti species arriving and reacting on the Pb‐covered surface. The Ti sticking coefficient is rather small on such a surface. This model qualitatively explains the change in step coverage. © 1995 American Institute of Physics.