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Estimation of the depth resolution of secondary ion mass spectrometry at the interface SiO2/Si

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5 Author(s)
Kocanda, J. ; Department of Microelectronics, Slovak Technical University, Ilkovičova 3, 812 19 Bratislava, Slovakia ; Fesic, V. ; Vesely, M. ; Breza, J.
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Similarities between the processes that occur during sputtering of monocrystalline Si by reactive O2+ primary ions and the interface SiO2/monocrystalline Si by noble gas ions (e.g., by Ar+) have motivated us to utilize the semiempirical model of P. C. Zalm and C. J. Vriezema [Nucl. Instrum. Methods B 67, 495 (1992)], modified later by M. Petravić, B. G. Svensson, and J. S. Williams [Appl. Phys. Lett. 62, 278 (1993)] to calculate the decay length λb, as defined by J. B. Clegg [Surf. Interface Anal. 10, 322 (1987)], at the SiO2/Si interface. The measured and calculated results agree remarkably well. Inconsistency observed to be larger than 100% for glancing incidence angles confirms limitations of this model that were admitted already by its authors. © 1995 American Institute of Physics.

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Applied Physics Letters  (Volume:67 ,  Issue: 9 )