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Low‐temperature‐processed (150–175 °C) Ge/Pd‐based Ohmic contacts (ρc∼1×10-6 Ω cm2) to n‐GaAs

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3 Author(s)
Wang, L.C. ; Electrical Engineering Department, Texas A&M University, College Station, Texas 77843‐3128 ; Hao, P.H. ; Wu, B.J.

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We have developed low resistance (ρc∼1×10-6 Ω cm2) Ge/Pd‐based (the Au/Ge/Pd and the Ag/Ge/Pd contacts) Ohmic contact schemes processed at temperatures 150–175 °C to n‐GaAs (n∼1×1018 cm-3). The Ohmic contact formation mechanism can be rationalized in terms of the solid phase regrowth (SPR) principle and the interdiffusion between Au (or Ag) and Ge. © 1995 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:67 ,  Issue: 4 )