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Preparation of nitrogen containing carbon films using chemical vapor deposition enhanced by electron cyclotron resonance plasma

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4 Author(s)
Inoue, Tohru ; Department of Chemistry, Nagaoka University of Technology, Kamitomioka, Nagaoka, Niigata 940‐21, Japan ; Ohshio, Shigeo ; Saitoh, Hidetoshi ; Kamata, Kiichiro

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A chemical vapor deposition apparatus enhanced by electron cyclotron resonance plasma was employed to deposit nitrogen containing carbon films. In the apparatus, negative dc bias voltage was applied to the substrate for acceleration of positive ions toward the substrate. The deposition rate and nitrogen content of the film was found to be mainly dependent upon the deposition conditions. Although a large N2 flow rate and bias voltage contribute to inhibit film growth through surface sputtering of the substrate, an optimum [N2]/([CH4]+[N2]) flow rate of 0.67 and a bias voltage of 50 V promote nitrogen implantation into the growing films through possible nitrogen ion bombardment. © 1995 American Institute of Physics.  

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Applied Physics Letters  (Volume:67 ,  Issue: 3 )