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Nanometer‐scale field‐induced oxidation of Si(111):H by a conducting‐probe scanning force microscope: Doping dependence and kinetics

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5 Author(s)
Teuschler, T. ; Institut für Technische Physik, Universität Erlangen‐Nürnberg, Erwin‐Rommel‐Strasse 1, D‐91058 Erlangen, Germany ; Mahr, K. ; Miyazaki, S. ; Hundhausen, M.
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Hydrogen‐terminated Si(111) was patterned on the nanometer scale by field‐induced oxidation using a biased conducting‐probe scanning force microscope. The kinetics of oxide growth as well as its dependence on doping are investigated. Field‐induced oxidation is observed for voltages exceeding a doping dependent threshold above which oxidation kinetics follows a power law. © 1995 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:67 ,  Issue: 21 )

Date of Publication:

Nov 1995

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