By Topic

A comprehensive optical characterization method for high-performance n-p-n AlGaAs-GaAs heterojunction bipolar transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Lu, Z.H. ; Nat. Renewable Energy Lab., Golden, CO, USA ; Majerfeld, A. ; Wright, P.D. ; Yang, L.W.

We report a comprehensive optical wafer evaluation technique for C-doped n-p-n heterojunction bipolar transistors (HBT) using low temperature photoluminescence spectroscopy. The correspondence between the optically determined parameters at the wafer level and the electrical device parameters is demonstrated. The hole density in the base of transistor structures was obtained from optical transitions in the p+-GaAs layer exploiting the bandgap narrowing effect. Furthermore, our experimental studies, which combine optical and electrical measurements, show that a photovoltaic effect observed in the optical spectrum measures the strength of carrier recombination processes in the emitter-base heterojunction region. Because interface recombination strongly affects the dc current gain of these devices, photoluminescence spectroscopy of epitaxial wafers provides critical information on HBT device parameters prior to device fabrication

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:1 ,  Issue: 4 )