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InGaAsP/GaAs elastically strained quaternary solid solutions with high critical thicknesses grown by liquid phase epitaxy

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5 Author(s)
Bolkhovityanov, Yu.B. ; Institute of Semiconductor Physics, 630090 Novosibirsk, Russia ; Jaroshevich, A.S. ; Nomerotsky, N.V. ; Revenko, M.A.
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Highly elastically strained films of InGaAsP solid solutions in 1.4–1.8 eV interval of band gaps were grown on GaAs(111)B substrates by liquid phase epitaxy. Elastic strains close to 1% are achieved. The determined critical thicknesses exceed the predictions of the energy equilibrium theory by Matthews and Blakeslee by as much as an order of magnitude. © 1995 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:67 ,  Issue: 17 )

Date of Publication:

Oct 1995

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