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Highly elastically strained films of InGaAsP solid solutions in 1.4–1.8 eV interval of band gaps were grown on GaAs(111)B substrates by liquid phase epitaxy. Elastic strains close to 1% are achieved. The determined critical thicknesses exceed the predictions of the energy equilibrium theory by Matthews and Blakeslee by as much as an order of magnitude. © 1995 American Institute of Physics.