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In situ x‐ray diffraction study of the role of annealing ambient in epitaxial CoSi2 growth from Co/Ti bilayers on Si(001)

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3 Author(s)
Selinder, T.I. ; Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 ; Miller, D.J. ; Gray, K.E.

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The reactions during annealing of a Co/Ti bilayer structure on Si(001) were studied in situ to reveal the roles of the Ti interlayer and the annealing ambient on the formation of epitaxial CoSi2. We shown that an oxygen contaminant in the nitrogen annealing gas is needed to form a stable, Co–Ti–O (spinel) membrane at the metal/Si interface that limits diffusion and is crucial for the perfection of epitaxial CoSi2. Annealing in vacuum or otherwise inert environments led to polycrystalline CoSi2 films and no spinel phase. © 1995 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:67 ,  Issue: 11 )