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Behavior of intrinsic Si point defects during annealing in vacuum

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7 Author(s)
Gossmann, H.‐J. ; AT&T Bell Laboratories, Murray Hill, New Jersey 07974 ; Rafferty, C.S. ; Unterwald, F.C. ; Boone, T.
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Using B and Sb doped Si(100) doping superlattices (DSL) as tracers of native Si point defect behavior it is shown that vacuum annealing at 810 °C leads to a depletion of Si self‐interstitials, with their smallest concentration at the surface, but does not affect the vacancy population. At a fixed depth, the interstitial concentration drops for increasing annealing times; for a given time, the interstitial concentration increases into the sample as a function of depth. Inert anneals of a B‐DSL in Ar show flat interstitial profiles. Apparently, the vacuum anneal makes the surface a better sink for interstitials than an inert Ar anneal, leading to an equilibrium interstitial concentration below the value in the bulk and establishing a net outflow of interstitials to the surface. The absence of a response of the vacancy population yields a lower limit on the interstitial‐vacancy recombination time of 104 s at 810 °C. Process simulation of this scenario captures the essential trends of the experimental data. © 1995 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:67 ,  Issue: 11 )

Date of Publication:

Sep 1995

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