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AlGaN pn homo‐ and heterojunctions were fabricated on silicon carbide substrates by metalorganic chemical vapor deposition. AlN concentration in AlGaN layers ranged from 2 to 8 mol %. Mesa structures were made by reactive ion etching. Electroluminescence (EL) from AlGaN pn junctions was studied. EL peaks associated with near band‐to‐band transition in AlGaN were detected. The minimum wavelength of EL peak of ∼348 nm (hν∼3.56 eV, 300 K) was measured for a p‐Al
Published in:
Applied Physics Letters
(Volume:67
,
Issue:
1
)
Date of Publication: Jul 1995
- Page(s):
- 115 - 117
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.115501
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Jul 1995
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