By Topic

Electrical properties and microstructures of Au/Pt/Ti/Ni ohmic contacts to p‐type ZnTe

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Mochizuki, K. ; Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan ; Terano, A. ; Momose, Masayuki ; Taike, Akira
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.115500 

Electrical properties and microstructures of Au/Pt/Ti/Ni ohmic contacts to p‐type ZnTe were investigated using the transmission line model method and cross‐sectional transmission electron microscopy. The specific contact resistance decreases when the annealing temperature is increased and reaches a minimum at 300 °C. The formation of NiTe2 from the reaction between Ni and ZnTe plays an important role in lowering the contact resistance. A contact stability test performed at 102 °C suggests that these ohmic contacts are stable even under high‐current injection. © 1995 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:67 ,  Issue: 1 )