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Frequency analysis of reflection high‐energy electron diffraction (RHEED) intensity oscillations during GaAs growth by molecular beam epitaxy on nominally‐oriented (111)B substrates is reported. Double frequency oscillations have been observed and analyzed in a wide range of substrate temperatures. Because the growth rate deduced from RHEED frequency analysis was found to be independent of substrate temperature, no Ga loss from the sample surface seems to take place during growth under conditions which allow RHEED intensity oscillations. © 1995 American Institute of Physics.