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Observation of strong contrast from doping variations in transmission electron microscopy of InP‐based semiconductor laser diodes

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3 Author(s)
Hull, R. ; AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974 ; Stevie, F.A. ; Bahnck, D.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.114206 

We report strong transmission electron microscope (TEM) contrast between p‐, i‐, and n‐doped InP layers in semiconductor laser diodes. For doping concentrations ∼1018 cm-3, contrast levels on the order 30% are observed between p‐ and n‐type layers. A critical feature of these experiments is that the samples imaged in the TEM are relatively perfect, plane‐parallel sided membranes fabricated with a focused ion beam. This technique offers the ability to detect and map doping variations with nm‐scale resolution, simultaneously with the other compositional and defect information inherent to TEM. © 1995 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:66 ,  Issue: 3 )

Date of Publication:

Jan 1995

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