Cart (Loading....) | Create Account
Close category search window

Study of deep hole and electron traps in nitrogen‐doped ZnSe by isothermal capacitance transient spectroscopy and deep level transient spectroscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Tanaka, Kiyotake ; Department of Electrical Engineering, Hiroshima University, Higashi‐Hiroshima 724, Japan ; Zhu, Ziqiang ; Yao, Takafumi

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Deep hole traps in N‐doped p‐type ZnSe epilayer grown by molecular‐beam epitaxy have been studied using isothermal capacitance transient spectroscopy and deep level transient spectroscopy measurement (DLTS). Two hole traps with thermal activation energies of 0.68 and 0.85 eV were detected. These centers have large potential barrier heights in the carrier capture process. The thermal activation energies for the carrier capture were 0.23 eV on KT1 trap and 0.33 eV on KT2. These facts indicate that large lattice relaxation is induced in the hole capture/ emission processes. The deep electron trap related to active nitrogen doping was measured through comparison of the DLTS results from n‐type ZnSe co‐doped with chlorine and nitrogen with those from chlorine‐doped n‐type ZnSe. A deep electron trap associated with nitrogen doping with activation energy of 0.36 eV below the conduction band was found. © 1995 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:66 ,  Issue: 24 )

Date of Publication:

Jun 1995

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.