By Topic

Liquid phase epitaxial growth of high quality GaAs on InP using Se‐doped GaAs buffer layer and grating‐patterned substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
10 Author(s)
Kim, Dong‐Keun ; Department of Metallurgical Engineering, Chonnam National University, Kwangju 500‐757, South Korea ; Ahn, Ju‐Heon ; Lee, Byung-Teak ; Lee, H.J.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.113157 

High quality GaAs layers with excellent crystal quality and surface morphology were grown on InP substrates (GaAs/InP) using liquid phase epitaxy. Thin GaAs buffer layers heavily doped with Se were utilized to prevent the substrate meltback and the InP substrates patterned with gratings to reduce the dislocation density. Double crystal x‐ray diffraction showed about 230 arcsec full width at half maximum of the (400) reflection, which represents significant improvement compared to the previously reported 350 arcsec of the GaAs/InP layer grown by chemical beam epitaxy using strained superlattice buffer layers. © 1995 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:66 ,  Issue: 19 )