By Topic

High quality 4H‐SiC epitaxial layers grown by chemical vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
7 Author(s)
Kordina, O. ; Linköping University, Department of Physics and Measurement Technology, 581 83 Linköping, Sweden ; Henry, A. ; Bergman, J.P. ; Son, N.T.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

High quality, homoepitaxial layers of 4H‐SiC have been grown by chemical vapor deposition in a hot‐wall reactor. The residual doping concentration obtained by capacitance versus voltage measurements was as low as 2×1014 cm-3. The high quality is confirmed by photoluminescence measurements performed at low temperatures (1.8–4.2 K) showing strong free exciton related luminescence and by the fact that optically detected cyclotron resonance signals could be observed (at 6 K), as a result of the highest mobility reported in SiC. © 1995 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:66 ,  Issue: 11 )