By Topic

Structural study of defects induced during current injection to II–VI blue light emitter

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
7 Author(s)
Tomiya, S. ; Sony Corporation Research Center, 174, Fujitsuka‐cho, Hodogaya‐ku, Yokohama 240, Japan ; Morita, E. ; Ukita, M. ; Okuyama, H.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.113238 

We have carried out structural studies of nonluminescent areas developed by current injection in ZnMgSSe alloy‐based II–VI blue light emitting diodes by electroluminescence topography and transmission electron microscopy. The nonradiative regions, which spread out in the 〈100〉 direction during current injection, consist of a high density of dislocation dipoles and dislocation loops. The source of these defects is the preexisting stacking faults originating at the substrate/epilayer interface. The dipoles themselves are aligned along both of the 〈110〉 directions lying in the {111} plane. Their Burgers vectors were of the type (a/2)〈011〉 inclined at 45° to the (001) junction plane. © 1995 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:66 ,  Issue: 10 )