By Topic

Correlation between nucleation site density and residual diamond dust density in diamond film deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Ihara, Manabu ; Department of Chemical Engineering, The Faculty of Engineering, The University of Tokyo, Bunkyo‐ku, Tokyo 113, Japan ; Komiyama, Hiroshi ; Okubo, Tatsuya

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Diamond was deposited on substrates pre‐etched with diamond powder using either a microwave plasma chemical vapor deposition method or a hot‐filament‐assisted chemical vapor deposition method. Density of residual diamond dust (i.e., number of diamond particles per unit area on the surface of a substrate) on the pre‐etched substrates was determined using field emission scanning electron microscopy, and ranged from 3.3×107 to 6.6×1010 ♯/cm2. The diamond nucleation‐site density (i.e., number of nucleation sites per unit area on the surface of a substrate) ranged from 1.5×106 sites/cm2, typical of the deposition on a substrate etched with diamond paste, to 1.1×1010 sites/cm2, sufficient to create nanostructured diamond films. We found that the nucleation site density was about 10% of the residual dust density. Our results also show that the residual diamond dust is the main source of nucleation sites for diamond growth on diamond‐etched substrates.

Published in:

Applied Physics Letters  (Volume:65 ,  Issue: 9 )