By Topic

Synthesis of dislocation free Siy(SnxC1-x)1-y alloys by molecular beam deposition and solid phase epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
He, Gang ; Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125 ; Savellano, Mark D. ; Atwater, Harry A.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Synthesis of strain‐compensated single‐crystal Siy(SnxC1-x)1-y alloy films on Si (100) substrates has been achieved with compositions of Sn and C greatly exceeding their normal equilibrium solubility in Si. Amorphous SiSnC alloys were deposited by molecular beam deposition from solid sources followed by thermal annealing. In situ monitoring of crystallization was done using time‐resolved reflectivity. Solid phase epitaxy for Si0.98Sn0.01C0.01 occurs at a rate about 20 times slower than that of pure Si. Compositional and structural analysis done using Rutherford backscattering, electron microprobe, ion channeling, x‐ray diffraction, and transmission electron microscopy are consistent with substitutional C and Sn, and with defect‐free single crystal films.

Published in:

Applied Physics Letters  (Volume:65 ,  Issue: 9 )