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Intersubband hole absorption in GaAs‐GaInP quantum wells grown by gas source molecular beam epitaxy

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9 Author(s)
Brown, G.J. ; Wright Laboratory, Materials Directorate, WL/MLPO, Wright Patterson AFB, Ohio 45433‐7707 ; Hegde, S.M. ; Hoff, J. ; Jelen, C.
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P‐doped GaAs‐GaInP quantum wells have been grown on GaAs substrate by gas source molecular beam epitaxy. Structural quality has been evidenced by x‐ray diffraction. A narrow low‐temperature photoluminescence full width at half‐maximum has been measured. Strong hole intersubband absorption has been observed at 9 μm, and its dependence on light polarization has been investigated.

Published in:

Applied Physics Letters  (Volume:65 ,  Issue: 9 )

Date of Publication:

Aug 1994

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