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X‐ray diffractometric characterization of the GaAsP/GaAs and InGaAs/GaAsP superlattices grown on offcut GaAs(001) substrate by means of the reciprocal space mapping

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2 Author(s)
Gaca, J. ; Institute of Electronic Materials Technology, 01‐919 Warsaw 118, Wolczynska 133, Poland ; Wojcik, M.

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A technique of mapping a region of reciprocal space near a given substrate reflection using a standard powder diffractometer enabling (θ-ω/2θ) scan is applied to investigate superlattices grown on misoriented substrate. The parameters describing superlattice geometry are calculated on the basis of collected diffraction data. The accuracy of the results is compared with that of other techniques.

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Applied Physics Letters  (Volume:65 ,  Issue: 8 )