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Enhancement of high‐temperature photoluminescence in strained Si1-xGex/Si heterostructures by surface passivation

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4 Author(s)
St.Amour, A. ; Department of Electrical Engineering, Photonic and Opto‐Electronic Materials Center (POEM), Princeton University, Princeton, New Jersey 08544 ; Sturm, J.C. ; Lacroix, Y. ; Thewalt, M.L.W.

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The photoluminescence from strained Si1-xGex alloy quantum wells on Si(100) has been measured from 6 to 300 K. It is shown that the high‐temperature photoluminescence of Si1-xGex quantum wells can be increased by over an order of magnitude by passivation of the top silicon surface. Through experiments and a model, it is clearly demonstrated that the decay of the Si1-xGex photoluminescence at high temperature is controlled by surface recombination, not by an intrinsic property of Si1-xGex. By applying proper conditions, nearly constant Si1-xGex photoluminescence can be achieved from 77 to 250 K. © 1994 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:65 ,  Issue: 26 )