Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.112610
Variation of the preparation conditions of porous silicon carbide is shown to have a strong effect on the structural and electrical properties of the material obtained. A correlation has been observed between the fiber size and resistivity of porous SiC, a decrease of fiber size results in a semi‐insulating material due to Fermi‐level pinning to surface states. A model is proposed for the mechanism of fiber size self‐regulation responsible for the porous material formation. The model relates the blocking of the fiber dissolution process to the increase of resistivity in a thin fiber due to Fermi‐level pinning. We suggest that the Fermi‐level pinning model is also applicable to the formation mechanism of porous silicon. © 1994 American Institute of Physics.