By Topic

Near-field photoconductivity: Application to carrier transport in InGaAsP quantum well lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
7 Author(s)
Buratto, S.K. ; (AT&T Bell Laboratories, Murray Hill, New Jersey 07974 ; Hsu, J.W.P. ; Betzig, E. ; Trautman, J.K.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A new contrast method in near-field scanning optical microscopy in which the near-field probe is used to excite photocurrent in a semiconductor sample is described and demonstrated. The use of near-field optics results in an order-of-magnitude improvement in spot size and a fivefold improvement in resolution over previous methods of photocurrent imaging. The application of this near-field photoconductivity technique to a multiquantum well laser provides direct visualization of carrier transport throughout the structure, yielding information on growth inhomogeneities, carrier leakage and isolation, and the overall quality of p-n junctions. © 1994 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:65 ,  Issue: 21 )