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Growth and characterization of thallium‐ and gold‐doped PbSe0.78Te0.22 layers lattice matched with BaF2 substrates

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3 Author(s)
McCann, Patrick J. ; School of Electrical Engineering and Laboratory for Electronic Properties of Materials, University of Oklahoma, Norman, Oklahoma 73019 ; Aanegola, Srinath K. ; Furneaux, John E.

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We report on liquid phase epitaxial growth and Hall effect characterization of thallium‐ and gold‐doped PbSe0.78Te0.22 layers lattice matched with BaF2 substrates. Thallium behaved as an acceptor allowing growth of compensated p‐type PbSe0.78Te0.22 layers with hole concentrations as high as 2.2×1018 cm-3. (Undoped PbSe0.78Te0.22 epitaxial layers were n‐type with electron concentrations of 4.3×1018 cm-3.) The transition from n‐type to p‐type occurs at approximately 1.2 at. % thallium in the growth solution. Gold also exhibited acceptor behavior for low doping concentrations but behaved as a donor for doping concentrations greater than 1 at. % such that p‐type layers could not be obtained. Electron mobilities as high as 7846 cm2/V s at 77 K were measured in this ternary alloy. © 1994 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:65 ,  Issue: 17 )

Date of Publication:

Oct 1994

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