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Electrical properties of thermal oxide grown using dry oxidation on p‐type 6H‐silicon carbide

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3 Author(s)
Alok, Dev ; Power Semiconductor Research Center, North Carolina State University, Raleigh, North Carolina 27695 ; McLarty, P.K. ; Baliga, B.J.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.112753 

The electrical properties of thermal oxides grown on p‐type 6H‐silicon carbide were investigated during this work. Thermal oxides were grown on 7×1015 cm-3 aluminum doped p‐type 6H‐silicon carbide at 1275 °C in a dry oxygen ambient. Capacitance‐voltage measurement indicated the presence of a large positive charge in the oxide. The interface state density and effective charge density for these oxides was estimated to be 1×1011 cm-2 eV-1 and 8×1012 cm-2 respectively. Bias temperature stress measurement showed the presence of negative bias stress instability and slow trapping. © 1994 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:65 ,  Issue: 17 )

Date of Publication:

Oct 1994

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