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A new technique to fabricate a periodically domain‐inverted structure in LiNbO3 is reported. This structure, fabricated by Ti indiffusion on a LiNbO3 substrate, is transferred in a LiNbO3 thin film grown by liquid phase epitaxy. As the growth temperature decreases below 690 °C, the cross section of the inverted domain changes from a reversed trapezoidal to a rectangular shape. © 1994 American Institute of Physics.
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