System Maintenance Notice:
Single article purchases and IEEE account management are currently unavailable. We apologize for the inconvenience.
By Topic

Direct growing of lightly doped epitaxial silicon without misfit dislocation on heavily boron‐doped silicon layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
Lee, Ho‐Jun ; Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Kusong‐dong 373‐1, Yusong‐gu, Taejon 305‐701, Korea ; Kim, Chang‐Soo ; Han, Chul‐Hi ; Kim, Choong‐Ki

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.112769 

Without buffer layers, a lightly boron‐doped epitaxial layer of good crystalline quality has been directly grown on a heavily boron‐doped silicon layer by eliminating misfit dislocations in the heavily boron‐doped layer. X‐ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of an n+/p diode fabricated in the epitaxial silicon has been measured to be 0.6 nA/cm2 at 5 V. © 1994 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:65 ,  Issue: 17 )