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Selective ablation of a hydrogenated amorphous silicon thin layer by the second‐harmonic radiation of a transversely excited atmospheric CO2 laser

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5 Author(s)
Sumiyoshi, Tetsumi ; Department of Electrical Engineering, Faculty of Science and Technology, Keio University, 3‐14‐1 Hiyoshi, Kohoku‐ku, Yokohama 223, Japan ; Ninomiya, Yutaka ; Shiratori, Akira ; Obara, Minoru
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The second‐harmonic radiation of the transversely excited atmospheric CO2 laser generated by a AgGaSe2 nonlinear crystal is used for the selective ablation of a hydrogenated amorphous silicon (a‐Si:H) thin layer on a quartz substrate. The vibrational energy of the Si—H bonds contained in a‐Si:H at 10 at. % coincides with the photon energy of the 5 μm light and absorbed the laser photons to sufficiently ablate the layer without damage on the quartz substrate. © 1994 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:65 ,  Issue: 17 )

Date of Publication:

Oct 1994

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