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Subsurface hydrogenated amorphous silicon to μc‐hydrogenated silicon transformation during magnetron sputter deposition determined by spectroscopic ellipsometry

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5 Author(s)
Yang, Y.H. ; Coordinated Science Laboratory and the Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801 ; Katiyar, M. ; Feng, G.F. ; Maley, N.
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We use in situ spectroscopic ellipsometry to analyze the microstructure of the μc‐Si:H/a‐Si:H interface deposited by reactive magnetron sputtering of a Si target in (Ar+H2). We increase the hydrogen pressure to promote μc‐Si:H formation and observe several effects. Initially, H penetrates ∼45 Å into the a‐Si:H substrate and increases its hydrogen content. Then ∼55 Å of hydrogen‐rich a‐Si:H deposits. Finally, μc‐Si:H nucleates on top of this ∼100 Å thick, high H‐content a‐Si:H interface layer. As μc‐Si:H grows, the thickness of the amorphous interface layer decreases by ∼40 Å; the void fraction in the μc‐Si:H layer is always ≤15 vol %, ruling out the possibility that the a‐Si:H is etched away. These results suggest that a‐Si:H can be transformed into μc‐Si:H in a subsurface region under appropriate conditions. © 1994 American Institue of Physics.

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Applied Physics Letters  (Volume:65 ,  Issue: 14 )