Cart (Loading....) | Create Account
Close category search window

Seam line defects in silicon‐on‐insulator by merged epitaxial lateral overgrowth

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Shih, Yang‐Chin ; Electronics Research Laboratory, Department of Electrical Engineering and Computer Science, and Department of Materials Science and Mineral Engineering, University of California at Berkeley, Berkeley, California 94720 ; Lou, Jen-Chung ; Oldham, William G.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Selective epitaxial growth of silicon through windows in SiO2 in a hot wall low‐pressure chemical vapor deposition system has been used to fabricate silicon‐on‐insulator structures by epitaxial lateral overgrowth. Under suitable conditions this process yields a continuous epitaxial film over buried oxides. However, a unique ‘‘seam‐like’’ defect was observed at the interfaces where two lateral growth fronts meet each other. A series of threading dislocations along the merging interface were identified as the structure of the seam defect. Epitaxial lattice mismatch at certain juncture points of two opposing growth fronts could have initiated the dislocations. Accumulated strain in the epitaxial film from oxide surface perturbation or interfacial stress are possible sources of the juncture point mismatch.

Published in:

Applied Physics Letters  (Volume:65 ,  Issue: 13 )

Date of Publication:

Sep 1994

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.