Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.112067
High quality, completely relaxed Ge films have been grown on Si(111) using Sb as surfactant at the initial stage of growth. After desorbing the surface Sb layer, cusplike reflection high‐energy electron diffraction intensity oscillations indicated excellent Ge layer‐by‐layer epitaxy. High resolution x‐ray diffraction analysis showed a very high crystalline quality and well resolved thickness fringes consistent with a flat relaxed Ge layer. Chemical preferential etching experiments revealed a defect density of down to ∼3×104 cm-2.