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Study of reactive ion etching‐induced damage in GaAs/AlGaAs structures using a quantum well intermixing probe

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4 Author(s)
Ooi, B.S. ; Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, Scotland, United Kingdom ; Bryce, A.C. ; Wilkinson, C.D.W. ; Marsh, J.H.

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We report the damage distribution induced by C2F6 and SiCl4 reactive ion etching (RIE) using quantum wells and quantum well intermixing (QWI) as probes. Photoluminescence emission at 77 K was measured both before and after rapid thermal annealing at 900 °C for 30 s. Our results show that the QWI probing technique can effectively be utilized as a sensitive probe of RIE damage. A damage depth of 650 Å before annealing and blue shifts of up to 65 meV after annealing were obtained in C2F6 RIE regions. A damage depth of 100 Å and blue shifts of up to 30 meV were observed in SiCl4 RIE regions.

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Applied Physics Letters  (Volume:64 ,  Issue: 5 )