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Time‐resolved photoluminescence has been used to study carrier recombination in n‐ and p‐type doped ZnSe at room temperature. A band‐edge photoluminescence decay time of ∼240 ps has been measured for heavily doped n‐type material together with a relaxation time of a few microseconds for the associated deep‐level emission. The band‐edge photoluminescence decay time for p‐type doped material was ≤11 ps and is indicative of a high level of nonradiative Shockley–Read recombination.