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Coulomb blockade in the inversion layer of a Si metal‐oxide‐semiconductor field‐effect transistor with a dual‐gate structure

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4 Author(s)
Matsuoka, Hideyuki ; Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan ; Ichiguchi, Tsuneo ; Yoshimura, Toshiyuki ; Takeda, E.

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We have studied the transport properties of artificially squeezable inversion layers in a Si metal‐oxide‐semiconductor field‐effect‐transistor with a dual‐gate structure. Increasing the potential barrier height with constant intervals along the one‐dimensional channel gradually transforms a simple quantum wire into coupled quantum dots. The clear change in transport properties has been observed by changing the tunnel barrier height at low temperatures. The experimental results are discussed in terms of one‐dimensional subbands and the Coulomb blockade of single‐electron tunneling.

Published in:

Applied Physics Letters  (Volume:64 ,  Issue: 5 )