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Growth of oriented diamond on single crystal of silicon carbide (0001)

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3 Author(s)
Suzuki, T. ; Technical Research Laboratory, Toshiba Tungaloy Co., Ltd., 1‐7 Tsukagoshi, Saiwai‐ku, Kawasaki 210, Japan ; Yagi, M. ; Shibuki, K.

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Diamond was deposited on a (0001) plane of an α‐silicon carbide single crystal by the microwave method. The substrate surface was cleaned by pretreatment with hydrogen gas at 1200 °C. Cubo‐octahedral diamond crystals with (111)D‖(0001)SiC were obtained.

Published in:

Applied Physics Letters  (Volume:64 ,  Issue: 5 )