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High Tc Josephson junctions combining a grain boundary and local strain, using NdGaO3 bicrystal substrates

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1 Author(s)
Quincey, P.G. ; Division of Electrical Science, National Physical Laboratory, Teddington, Middlesex, TW11 OLW, United Kingdom

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The bicrystal substrate approach to high Tc Josephson junctions has previously used substrates with cubic (isotropic) structure. NdGaO3, which has orthorhombic structure, has excellent lattice match to YBa2Cu3O7-x and good dielectric properties. When bicrystals are made with NdGaO3 in the usual (110) orientation, the anisotropy means that there will be thermally induced local strain at the grain boundary in any overlaid film. Several junctions have been made with this novel variation on the bicrystal technique, showing values of IcRN around 400 μV at 77 K.  

Published in:
Applied Physics Letters  (Volume:64 ,  Issue: 4 )

Date of Publication: Jan 1994

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