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We introduce a new technique for rapidly heating (106 °C/s) thin films using an electrical thermal annealing (ETA) pulse technique. By applying a high‐current dc electrical pulse to a conductive substrate‐heater material (Si), joule heating occurs thus heating the thin film. This method was demonstrated by heating thin films of aluminum at rates ranging from 103 to 106 °C/s. The temperature of the system is measured by using the substrate heater as a thermistor and is found to be within ≊±10 °C during anneals at ≊105 °C/s. Phase transformations in the Ti‐Si system were also observed using in situ resistivity measurements during ETA at ≊104 °C.