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1 000 000 °C/s thin film electrical heater: In situ resistivity measurements of Al and Ti/Si thin films during ultra rapid thermal annealing

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7 Author(s)
Allen, L.H. ; Department of Materials Science and Engineering and Coordinated Science Laboratory, University of Illinois at Urbana‐Champaign, Illinois 61801 ; Ramanath, G. ; Lai, S.L. ; Ma, Z.
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We introduce a new technique for rapidly heating (106 °C/s) thin films using an electrical thermal annealing (ETA) pulse technique. By applying a high‐current dc electrical pulse to a conductive substrate‐heater material (Si), joule heating occurs thus heating the thin film. This method was demonstrated by heating thin films of aluminum at rates ranging from 103 to 106 °C/s. The temperature of the system is measured by using the substrate heater as a thermistor and is found to be within ≊±10 °C during anneals at ≊105 °C/s. Phase transformations in the Ti‐Si system were also observed using in situ resistivity measurements during ETA at ≊104 °C.

Published in:

Applied Physics Letters  (Volume:64 ,  Issue: 4 )

Date of Publication:

Jan 1994

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