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Fabrication of a diamond field emitter array

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5 Author(s)
Okano, K. ; Department of Electronics, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259‐12, Japan ; Hoshina, Kimihiko ; Iida, Masamori ; Koizumi, Satoshi
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A diamond field emitter array has been fabricated. by Chemical vapor deposition. Diamond was grown on an inverted pyramidal‐shape Si substrate followed by removal of the substrate. The fabricated array was placed in a high vacuum pumping system with the pressure of ∼10-7 Torr and the emission current as a function of the anode voltage was measured. The distance between the tungsten anode and the diamond surface was held constant at 100 μm throughout the measurement. As a result, a current larger than 10-4 A was obtained for an anode voltage of 6 kV. A linear relationship in the Fowler–Nordheim plot indicated the existence of electron field emission from the fabricated diamond field emitter array.

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Applied Physics Letters  (Volume:64 ,  Issue: 20 )