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We present photorefractive measurements in undoped GaAs performed at 1.06 μm, 1.32 μm, and at 1.55 μm. Using concentrations of EL20/+ that we determined through optical absorption and electron paramagnetic resonance measurements in the same sample, we show that a single defect model with an electron‐hole competition quantitatively explains our results of photorefractive wave mixing.