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Preparation of aluminum nitride thin films by reactive sputtering and their applications to GHz‐band surface acoustic wave devices

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6 Author(s)
Okano, Hiroshi ; Functional Materials Research Center, Sanyo Electric Co., Ltd., 1‐18‐13, Hashiridani, Hirakata, Osaka, Japan ; Tanaka, Naoki ; Takahashi, Yusuke ; Tanaka, Toshiharu
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Single crystal aluminum nitride (AlN) thin films were prepared by a low‐temperature reactive sputtering on basal plane sapphire [(001)Al2O3] at a substrate temperature of less than 315 °C. Surface acoustic wave (SAW) characteristics with an interdigital transducer /(001)AlN/(001)Al2O3 structure were investigated. The phase velocity and temperature coefficient of delay time are 5750–5765 m/s and 55–63 ppm/°C at KH=1.2–1.6, respectively. Resonator‐type 1‐GHz‐band SAW filters with its structure were fabricated. The insertion loss and suppression were 23 dB and more than 20 dB, respectively.

Published in:

Applied Physics Letters  (Volume:64 ,  Issue: 2 )

Date of Publication:

Jan 1994

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