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GaAs quantum dots with lateral dimension of 25 nm fabricated by selective metalorganic chemical vapor deposition growth

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4 Author(s)
Nagamune, Y. ; Research Center for Advanced Science and Technology, University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153, Japan ; Nishioka, M. ; Tsukamoto, S. ; Arakawa, Y.

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We report on in situ fabrication and the photoluminescence spectra of pyramid‐shaped GaAs dot structures grown on (100) GaAs substrates using selective epitaxial growth by metalorganic chemical vapor deposition. The dot structures have lateral size of 25 nm and the period of 140 nm, showing a clear photoluminescence peak with strong intensity. In addition, energy change of magnetophotoluminescence spectra demonstrates the enhancement of exciton binding energy due to lateral confinement.

Published in:

Applied Physics Letters  (Volume:64 ,  Issue: 19 )

Date of Publication:

May 1994

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