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Modification on silicon (100) surfaces was demonstrated by using an atomic force microscope operating in air. Field‐enhanced oxidation on silicon surfaces with protection oxide was done locally by biasing a p‐type heavily doped silicon tip between -3 and -10 V. Oxide lines of width as small as ∼10 nm were achieved. After a dip in aqueous HF solution, the oxide was etched away; the modification depth, ∼1 nm, was characterized by the same atomic force microscope. Other field induced reactions for patterning are possible.