Cart (Loading....) | Create Account
Close category search window
 

Luminescent characteristics of a novel porous silicon structure formed in a nonaqueous electrolyte

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Propst, Eric K. ; School of Chemical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332‐0100 ; Rieger, Melissa M. ; Vogt, Kirkland W. ; Kohl, Paul A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.111987 

Novel porous silicon layers which photoluminesce and electroluminesce in an aqueous solution have been formed by oxidation of (100) silicon in anhydrous acetonitrile‐HF solutions. The novel porous structures consisted of large, noninterconnected pores, 1–2 μm diam, which grew normal to the surface. The pores were spaced 2–3 μm apart, and the length, which could be over 150 μm, was dependent on etch time and current density. Microporous structures (i.e., ≪100 nm), often associated with luminescence from porous silicon, were not detected by TEM, SEM, or infrared examination. The porous surface was hydride terminated, which was critical to the luminescence process. Since water and oxygen were not present during the formation of the porous structure and the pores were relatively large, neither silicon‐oxygen species (e.g., siloxenes) nor quantum size structures, appeared necessary for the generation visible luminescence from porous silicon.

Published in:

Applied Physics Letters  (Volume:64 ,  Issue: 15 )

Date of Publication:

Apr 1994

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.