Metalorganic chemical vapor deposition of titanium dioxide (TiO2) on p‐Si(100) using titanium isopropoxide and nitrous oxide via pyrolysis at relatively low (∼500 °C) temperature was performed to produce high quality TiO2/p‐Si interfaces and to fabricate TiO2 insulator gates with a dielectric constant of high magnitude. Scanning electron microscopy shows that the surfaces of the TiO2 films have very smooth morphologies. From the x‐ray diffraction analysis, the grown layer was found to be a polycrystalline film. Raman spectroscopy showed the optical phonon modes of a TiO2 thin film. The stoichiometry of the TiO2 film was investigated by Auger electron spectroscopy. Room‐temperature current‐voltage and capacitance‐voltage measurements clearly revealed metal‐insulator‐semiconductor behavior for the samples of the Ag/TiO2/p‐Si. The interface state density at the TiO2/p‐Si interface was approximately high 1011 eV-1 cm-2 at the middle of the Si energy gap, and the dielectric constant determined from the capacitance‐voltage measurements was as large as 73. These results indicate the TiO2 layers grown at relatively low temperature can be used for high density dynamic memory.