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We report on sulfur based surface passivation technique for InGaAs metal‐semiconductor‐metal (MSM) photodetectors with an InP barrier enhancement layer. We show that excessive leakage current and photocurrent gain, which are the two major performance‐limiting factors in MSM detectors, can be largely suppressed by a treatment of the InP surface with ammonium polysulfide. The dark current and photocurrent characteristics of such passivated devices were monitored over a period of half a year and were found to be stable. The improved performance of the device characteristics is explained in terms of a passivation‐induced reduction of surface charging effects.