By Topic

Determination of the density of states at the Fermi level of hydrogenated amorphous silicon in thin‐film transistor structure by space charge limited current measurement

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Soh, Hoe Sup ; Department of Physics, Korea Advanced Institute of Science and Technology, Yusung‐ku, Daejeon 305‐701, Korea ; Lee, Choochon ; Jin Jang ; Jung, Moon Youn
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We studied the space charge limited current effect in hydrogenated amorphous silicon (a‐Si:H) thin‐film transistors (TFTs). We demonstrate that the drain current is space charge limited when the source‐drain voltage is large and the gate voltage is small. Using this space charge limited current we determined the density of states in the gap of a‐Si:H in a‐Si:H TFT.  

Published in:

Applied Physics Letters  (Volume:63 ,  Issue: 6 )