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We studied the space charge limited current effect in hydrogenated amorphous silicon (a‐Si:H) thin‐film transistors (TFTs). We demonstrate that the drain current is space charge limited when the source‐drain voltage is large and the gate voltage is small. Using this space charge limited current we determined the density of states in the gap of a‐Si:H in a‐Si:H TFT.
Published in:
Applied Physics Letters
(Volume:63
,
Issue:
6
)
Date of Publication: Aug 1993
- Page(s):
- 779 - 781
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.109905
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Aug 1993
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