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Determination of the density of states at the Fermi level of hydrogenated amorphous silicon in thin‐film transistor structure by space charge limited current measurement

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5 Author(s)
Soh, Hoe Sup ; Department of Physics, Korea Advanced Institute of Science and Technology, Yusung‐ku, Daejeon 305‐701, Korea ; Lee, Choochon ; Jin Jang ; Jung, Moon Youn
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We studied the space charge limited current effect in hydrogenated amorphous silicon (a‐Si:H) thin‐film transistors (TFTs). We demonstrate that the drain current is space charge limited when the source‐drain voltage is large and the gate voltage is small. Using this space charge limited current we determined the density of states in the gap of a‐Si:H in a‐Si:H TFT.  

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Applied Physics Letters  (Volume:63 ,  Issue: 6 )