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Optical properties of Si/Si0.87Ge0.13 multiple quantum well wires

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6 Author(s)
Tang, Y.S. ; Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, United Kingdom ; Wilkinson, C.D.W. ; Sotomayor Torres, C.M. ; Smith, D.W.
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Nanometer‐scale wires cut into a Si/Si0.87Ge0.13 multiple quantum well structure were fabricated and characterized by using photoluminescence and photoreflectance at temperatures between 4 and 20 K. It was found that, in addition to a low‐energy broadband emission at around 0.8 eV and other features normally observable in photoluminescence measurements, fabrication process induced strain relaxation and enhanced electron‐hole droplets emission together with a new feature at 1.131 eV at 4 K were observed. The latter was further identified as a transition related to impurities located at the Si/Si0.87Ge0.13 heterointerfaces.

Published in:

Applied Physics Letters  (Volume:63 ,  Issue: 4 )

Date of Publication:

Jul 1993

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