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Measuring the junction temperature of AlGaAs/GaAs heterojunction bipolar transistors using electroluminescence

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3 Author(s)
Fukai, Yoshino K. ; NTT LSI Laboratories, 3‐1 Morinosato Wakamiya, Atsugi‐shi, Kanagawa 243‐01, Japan ; Matsuoka, Yutaka ; Furuta, T.

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Rises in the junction temperatures of heterojunction bipolar transistors (HBTs) due to self‐heating effects during transistor operation are measured using the electroluminescence of the band‐to‐band recombination. This method is useful for the direct junction temperature monitoring of small geometry devices. Junction temperatures measured in AlGaAs/GaAs HBTs with five 2×20 μm2 emitter fingers are raised 115 °C when the product of the collector current and the emitter‐collector voltage is 0.25 W. The thermal resistance is determined to be 260 °C/W at 300 K.

Published in:

Applied Physics Letters  (Volume:63 ,  Issue: 3 )

Date of Publication:

Jul 1993

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