By Topic

Measuring the junction temperature of AlGaAs/GaAs heterojunction bipolar transistors using electroluminescence

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Fukai, Yoshino K. ; NTT LSI Laboratories, 3‐1 Morinosato Wakamiya, Atsugi‐shi, Kanagawa 243‐01, Japan ; Matsuoka, Yutaka ; Furuta, T.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Rises in the junction temperatures of heterojunction bipolar transistors (HBTs) due to self‐heating effects during transistor operation are measured using the electroluminescence of the band‐to‐band recombination. This method is useful for the direct junction temperature monitoring of small geometry devices. Junction temperatures measured in AlGaAs/GaAs HBTs with five 2×20 μm2 emitter fingers are raised 115 °C when the product of the collector current and the emitter‐collector voltage is 0.25 W. The thermal resistance is determined to be 260 °C/W at 300 K.

Published in:

Applied Physics Letters  (Volume:63 ,  Issue: 3 )