By Topic

Observation of open-ended stacking fault tetrahedra in Si0.85Ge0.15 grown on V-grooved (001) Si and planar (111) Si substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Howard, David J. ; Division of Engineering, Brown University, Providence, Rhode Island 02912 ; Bailey, William E. ; Paine, David C.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.110317 

A new strain relief mechanism was observed in lattice mismatched epitaxial layers grown on (111) surfaces. Thin films of Si0.85Ge0.15 were epitaxilly grown by rapid thermal chemical vapor deposition on patterned (001) and planar (111) Si substrates. The (001) Si substrates were lithographically patterned and anisotropically etched to produce a line pattern of V-shaped grooves running in the [110] direction where the walls of the grooves were the {111} crystal planes. Cross-section and plan-view transmission electron microscopy studies revealed the presence of open-ended stacking fault tetrahedra in Si0.85Ge0.15 grown both on (111) Si wafers and the {111} side walls of the patterned (001) Si wafers. No defects were observed in the (001) portions of the films grown on nonplanar substrates.

Published in:

Applied Physics Letters  (Volume:63 ,  Issue: 21 )