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Observation of open-ended stacking fault tetrahedra in Si0.85Ge0.15 grown on V-grooved (001) Si and planar (111) Si substrates

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3 Author(s)
Howard, David J. ; Division of Engineering, Brown University, Providence, Rhode Island 02912 ; Bailey, William E. ; Paine, David C.

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A new strain relief mechanism was observed in lattice mismatched epitaxial layers grown on (111) surfaces. Thin films of Si0.85Ge0.15 were epitaxilly grown by rapid thermal chemical vapor deposition on patterned (001) and planar (111) Si substrates. The (001) Si substrates were lithographically patterned and anisotropically etched to produce a line pattern of V-shaped grooves running in the [110] direction where the walls of the grooves were the {111} crystal planes. Cross-section and plan-view transmission electron microscopy studies revealed the presence of open-ended stacking fault tetrahedra in Si0.85Ge0.15 grown both on (111) Si wafers and the {111} side walls of the patterned (001) Si wafers. No defects were observed in the (001) portions of the films grown on nonplanar substrates.

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Applied Physics Letters  (Volume:63 ,  Issue: 21 )